Semiconductor structure with silicide base tap

Details Semiconductor structure with silicide base tap Semiconductor structure with silicide base tap

H - Electricity

01

L

356/23

H01L 23/48 (2006.01) H01L 21/285 (2006.01) H01L 21/768 (2006.01) H01L 21/8249 (2006.01) H01L 23/485 (2006.01) H01L 23/528 (2006.01) H01L 23/532 (2006.01) H01L 27/108 (2006.01) H01L 27/11 (2006.01)

Patent

CA 1284391

ABSTRACT An improved field effect transistor utilizes a self- aligned contact structure in which a layer of metal capable of forming silicide is deposited on the source and drain regions as well as external to them. The metal forms metal silicide on the source and drain and, where it extends onto surrounding insulating regions, forms an interconnecting metal contact. In addition, bipolar devices may be formed on the same integrated circuit by employing insulating spacer regions around the edges of polysilicon electrodes to the bipolar devices. Also described are static and dynamic random access memory cells employing the technology.

615507

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