Semiconductor structures and a method of manufacturing...

Details Semiconductor structures and a method of manufacturing... Semiconductor structures and a method of manufacturing...

H - Electricity

01

S

148/1, 345/32, 1

H01S 5/227 (2006.01) H01L 21/306 (2006.01) H01S 5/22 (2006.01) H01S 5/323 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1332341

- 27 - ABSTRACT SEMICONDUCTOR STRUCTURES AND A METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURES In a semiconductor buried heterostructure laser, having a mesa 2, 3, 4 and confinement layers 5, 6, 7 on a substrate 12, at least the lowermost of the confinement layers 5, 6, 7 is substantially planar up to the mesa. This is achieved by MOVPE growth of InP against lateral surfaces of the mesa 2, 3, 4 which are defined by distinct crystallographic planes of the material of the mesa. In particular (111) B InP planes are used. The laser is particularly for use in the field of optical communications.

547521

Affiliated with

Also associated with

Rating

Semiconductor structures and a method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structures and a method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structures and a method of manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1266188