Semiconductor substrate and a manufacturing method thereof

Details Semiconductor substrate and a manufacturing method thereof Semiconductor substrate and a manufacturing method thereof

H - Electricity

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356/192

H01L 21/302 (2006.01) H01L 21/30 (2006.01) H01L 21/304 (2006.01) H01L 21/322 (2006.01)

Patent

CA 1121521

A SEMICONDUCTOR SUBSTRATE AND A MANUFACTURING METHOD THEREOF Abstract of the Disclosure This invention relates to a semiconductor substrate and a method of manufacturing the same. In a semi- conductor manufacturing process for a Si single crystal wafer or the like, before the step of mirror polishing, the rear surface of the Si wafer is ground in order to form a damaged layer having a predetermined thickness. The Si wafer is subsequently etched by chemical etching if desired, and the rear surface is further formed with an oxide film by thermal oxidation, if desired, whereby a semiconductor substrate exhibiting an intense gettering effect is produced.

321715

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