Semiconductor substrate and process for producing same

H - Electricity – 01 – L

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H01L 29/06 (2006.01) H01L 21/02 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2233132

In order to constantly produce a uniform SOI substrate without defect at a low cost by preventing destruction of a porous layer prior to separation of bonded substrates and effecting separation of the bonded substrates securely and easily, in a process for producing a semiconductor substrate comprising forming a non-porous semiconductor layer (13) on a first substrate (10) having porous layers (11, 12) formed on a surface thereof, forming an insulating layer (15) on a surface thereof, bonding the insulating layer (15) to a second substrate (14), and separating the porous layers (11, 12), thereby transferring the insulating layer (15) and the non-porous semiconductor layer (13) onto the surface of the second substrate (14), the first porous layer (11) is formed with a low porosity while the second porous layer is made thin to such extent as to be fragile to easily separate the first and the second substrates.

L'invention a trait à un procédé pour produire continuellement un substrat uniforme SOI sans défaut, à bas coût, tout en empêchant la destruction d'une couche poreuse avant la séparation des substrats liés et de séparer ces substrats facilement. Le procédé de production d'un substrat semiconducteur consiste à former une couche de semiconducteur non poreuse (13) sur un premier substrat (10) comprenant des couches poreuses (11, 12) formées sur une surface, à former une couche isolante (15), à lier la couche isolante (15) à une seconde surface (14), à séparer les couches poreuses (11, 12), et à transférer la couche isolante (15) et la couche de semiconducteur (13) non poreuse sur la surface du second substrat (14); la première couche poreuse (11) formée présente une faible porosité tandis que la seconde couche poreuse est mince au point d'être fragile pour séparer facilement le premier et le second substrats.

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