Semiconductor substrates doped with nitrogen

Details Semiconductor substrates doped with nitrogen Semiconductor substrates doped with nitrogen

C - Chemistry, Metallurgy

30

B

148/2.8

C30B 31/06 (2006.01) H01L 21/322 (2006.01) H01L 29/167 (2006.01)

Patent

CA 1250512

IMPROVED SEMICONDUCTOR SUBSTRATES ABSTRACT Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, containing oxygen are doped with sufficient nitrogen to enhance thermal precipitation of the oxygen.

479516

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