H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/198, 345/32,
H01L 29/205 (2006.01) H01L 21/20 (2006.01) H01L 29/12 (2006.01) H01L 29/15 (2006.01) H01L 29/66 (2006.01) H01S 5/343 (2006.01) H01S 5/32 (2006.01) H01S 5/323 (2006.01) H01S 5/34 (2006.01) H01S 5/40 (2006.01)
Patent
CA 1315865
ABSTRACT OF THE DISCLOSURE A novel quantum well semiconductor structure is described wherein the quantum well is formed by growing a thin (?500.ANG.) epitaxial layer on a patterned (e.g. grooved) nonplanar substrate so as to achieve thickness variations along the quantum well and hence laterally varying superlattice periodicity and QW depth. Using this structure one can achieve lateral carrier confinement and real refractive index waveguiding. Index guided GaAs/A/GaAs lasers are described.
589245
Bell Communications Research Inc.
Cassan Maclean
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