Semiconductor superlattice infrared source

Details Semiconductor superlattice infrared source Semiconductor superlattice infrared source

H - Electricity

01

L

345/50

H01L 33/00 (2006.01) H01S 5/34 (2006.01)

Patent

CA 1299719

TITLE SEMICONDUCTOR SUPERLATTICE INFRARED SOURCE INVENTORS HUI CHUN LIU ABSTRACT An infrared emitting semiconductor device having a layer-shaped infrared emitting region with a superlattice structure. The superlattice structure consists of thin alternating narrow and wide wells separated by thin barriers. The narrow well has one quasibound state E'0 while the wide well has two states E0 and E1 with E0' being located between E0 and E1. Under proper bias, an electron in state E0 can resonately tunnel out of the well through the quasibound state E'0 to the first excited state E1 of the next wide well. This electron can then relax to the ground state E0 where it can resonately tunnel to the next wide well and repeat the process. Infrared radiation with its photon energy equal to E1-E0 is emitted as the electrons relax from E1 to E0 in the wide wells.

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