Semiconductor superlattice self-electrooptic effect device

Details Semiconductor superlattice self-electrooptic effect device Semiconductor superlattice self-electrooptic effect device

H - Electricity

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H01L 31/08 (2006.01) G02F 3/02 (2006.01) H01L 31/11 (2006.01)

Patent

CA 2006682

- 12 - SEMICONDUCTOR SUPERLATTICE SELF-ELECTROOPTIC EFFECT DEVICE Abstract While maintaining low switching energy and high contrast ratio, enhanced carrier sweep out and increased spectral range are achieved by a self-electrooptic effect device including a semiconductor superlattice in the intrinsic region of a p-i-n diode. The semiconductor superlattice is realized by a series of interleaved barrier and well layers coupled by the resonant tunneling effect. The bandwidth of the conduction band and valence band of the superlattice is in the range of a few tens of millielectron volts, while the period falls in the range of a few nanometers.

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