Semiconductor superlattice with controlled plasmon dispersion

Details Semiconductor superlattice with controlled plasmon dispersion Semiconductor superlattice with controlled plasmon dispersion

H - Electricity

01

L

356/172, 356/34

H01L 23/48 (2006.01)

Patent

CA 1220563

24977 CN SEMICONDUCTOR SUPERLATTICE WITH CONTROLLED PLASMON DISPERSION ABSTRACT OF THE DISCLOSURE A semiconductor superlattice structure is comprised of multiple, alternatively-doped semiconductive material layers forming p and n layers that collectively define quantum wells of space charge. Contact means are used preferably in the form of a separate p contact and a separate n contact on the superlattice structure. Application of suitable bias voltage between the p and n layers, controls the length of the depletion regions and functions to modulate the carrier concentrations. This, in turn, modulates the plasmon energy. Devices that may be constructed in accordance with the principles of the invention include optical switches, optical modulators, and variable delay lines.

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