G - Physics – 05 – F
Patent
G - Physics
05
F
323/9
G05F 1/44 (2006.01) H03K 17/082 (2006.01) H03K 17/73 (2006.01)
Patent
CA 1131703
ABSTRACT A semiconductor switch comprising a PNPN switch, first and second transistors and a level shift element, wherein one outermost PN junction of the PNPN switch is short circuited by the first transistor, the emitter-base junction of the second transistor and the level shift element are connected in series, the series circuit is connected in parallel with the other outermost PN junction, and the collector of the second transistor is connected to the base of the first transistor, whereby the semiconductor switch may be sufficiently protected from DV/DT effect, and besides fairly sensitive to gate driving without degradation of the high breakdown voltage thereof.
336874
Gowling Lafleur Henderson Llp
Hitachi Ltd.
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