Semiconductor texturing process

Details Semiconductor texturing process Semiconductor texturing process

H - Electricity

01

L

H01L 31/0236 (2006.01)

Patent

CA 2467112

The invention provides a process for texturing a surface of a semiconductor material, the process comprising: applying a layer of a protective substance on said surface wherein said layer is sufficiently thin that it has a plurality of apertures therethrough; and contacting said layer and said semiconductor material with an etchant capable of etching said semiconductor material faster than said protective substance, said etchant making contact with said semiconductor material at least through said apertures, for a time and under conditions in which said semiconductor material is etched by said etchant in the vicinity of said apertures to produce a textured surface on said semiconductor material, but said protective substance is substantially unetched.

L'invention concerne un procédé de texturation d'une surface de matériau semiconducteur. Ce procédé consiste: à appliquer une couche de substance protectrice sur ladite surface, ladite couche étant suffisamment mince pour comporter une pluralité d'ouvertures; et à mettre en contact ladite couche et ledit matériau semiconducteur avec un agent de gravure pouvant graver ledit matériau semiconducteur plus rapidement que ladite substance protectrice, ledit agent de gravure étant en contact avec ledit matériau semiconducteur au moins à travers lesdites ouvertures, pendant une période déterminée et selon des conditions dans lesquelles ledit matériau semiconducteur est gravé par ledit agent de gravure à proximité desdites ouvertures pour produire une surface texturée sur ledit matériau semiconducteur, ladite substance protectrice demeurant sensiblement non gravée.

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