Semiconductor transducer

G - Physics – 01 – L

Patent

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Details

26/2, 356/200, 7

G01L 1/04 (2006.01)

Patent

CA 1271049

ABSTRACT OF THE DISCLOSURE A semiconductor transducer including a substrate having a well formed in one surface thereof and a semi- conductor layer having a first surface bonded to the substrate about the periphery of the well to form a diaphragm and a second surface which is substantially coplanar to the first surface and has a pedestal projecting therefrom which is disposed above the well. The side walls of the pedestal are substantially orthogonal to the second surface of the semiconductor layer. Means are provided for sensing the deflection of the diaphragm as a function of force applied to the pedestal. Structure preferably extends upward from the bottom of the well to limit the deflection of the diaphragm.

508500

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