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Patent
H - Electricity
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H01L 21/66 (2006.01) G01J 5/04 (2006.01) G01K 5/52 (2006.01) H01L 21/00 (2006.01) H01L 21/48 (2006.01) G01J 5/00 (2006.01) G01J 5/08 (2006.01)
Patent
CA 2132851
2132851 9321656 PCTABS00027 A method and apparatus are provided for measuring the temperature of articles such as semiconductor wafers (14) in a sealed chamber (12) of a processing apparatus such as a batch preheating module (10) of a semiconductor wafer processing cluster tool. Wafers (14) of generally known nominal diameter and coefficient of thermal expansion are placed at a known initial temperature into a processing chamber (12) which is then sealed. A pair of beams (40) of parallel light are passed by opposite edges of the wafer and the uninterrupted light from both beams are detected (48) and summed (60). When the wafer is heated in processing, ligth from the beams (40) is measured again. Expansion of the wafers (14) changes the amount of uninterrupted light detected, and the changed amount of light is measured. From the measurement, the initial temperature, the nominal diameter and the known coefficient of expansion, processing temperature is calculated.
Ishikawa Hiroichi
Kolesa Michael Steven
Macrae & Co.
Tokyo Electron Limited
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