Semiconductors

Details Semiconductors Semiconductors

H - Electricity

01

L

356/176

H01L 29/04 (2006.01) C30B 1/00 (2006.01)

Patent

CA 1098219

ABSTRACT A method of producing A semiconductor which comprises subjecting a diamond crystal to bombardment with a flux of carbon ions of sufficient energy to penetrate the diamond and cause crystal growth which is at least predominantly internal, the temperature of the crystal being such that the diamond crystal structure is maintained during growth, said bombardment being preceded, succeeded or accompanied by bomdardment with ions of a dopant which gives rise to semiconducting properties in the diamond.

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