C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 25/02 (2006.01) C30B 23/02 (2006.01) C30B 29/60 (2006.01) H01L 21/04 (2006.01) H01L 21/18 (2006.01) H01L 21/20 (2006.01) H01L 21/285 (2006.01) H01L 29/04 (2006.01) H01L 29/06 (2006.01) H01L 29/20 (2006.01) H01L 29/735 (2006.01)
Patent
CA 2140450
2140450 9402665 PCTABS00030 The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compatible crystal symmetry across the heterojunction between a semimetal and a semiconductor. A single layer semimetal/semiconductor structure is fabricated by growing a rhombohedral semimetal in a [111] direction on a substrate material having a (111) orientation, and then growing a zincblende semiconductor in a [111] direction on the semimetal. A multilayer semimetal/semiconductor structure may be grown from the single layer semimetal/semiconductor structure by growing an additional rhombohedral semimetal layer in a [111] direction on the preceding semiconductor grown, then growing an additional zincblende semiconductor layer in a [111] direction on the additional semimetal layer, and then repeating this process as many times as desired. Each semimetal to be sandwiched between semiconductors in the multilayer semimetal/semiconductor structure may be grown thin enough that the semimetal is converted into a semiconductor.
Golding Terry D.
Miller John H. Jr.
Swabey Ogilvy Renault
University Of Houston
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