Sensing circuit for memory cells

Details Sensing circuit for memory cells Sensing circuit for memory cells

G - Physics

01

R

324/59

G01R 19/00 (2006.01) G01R 19/145 (2006.01) G11C 11/4094 (2006.01) H03K 3/356 (2006.01)

Patent

CA 1050117

ABSTRACT OF THE DISCLOSURE A weal signal detecting circuit in which a sensing circuit, formed with a flip-flop circuit and bit lines each having connected thereto a plurality of 1-transistor type memory cells, are interconnected by separation transistors for separating them from each other, and in which power supply transistors are inserted between power sources and the bit lines. When the power supply transistors are turned on, the separation transistors are turned off, so that a signal detection can be performed with little power consumption. Further, in such a case, the bit lines are disconnected from the sensing circuit to thereby enable a high-speed and highly sensitive detecting operation to be stably achieved regardless of the number of memory cells.

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