Sequential lithographic methods to reduce stacking fault...

Details Sequential lithographic methods to reduce stacking fault... Sequential lithographic methods to reduce stacking fault...

H - Electricity

01

L

H01L 21/04 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2554815

An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes first features therein. Second features are then formed in the first epitaxial layer. The second features include at least one sidewall that is oriented nonparallel to the crystallographic direction. A second epitaxial silicon carbide layer is then grown on the surface of the first epitaxial silicon carbide layer that includes the second features therein.

Une couche carbure silicium épitaxiale est fabriquée par la formation de premiers éléments dans une surface d'un substrat carbure silicium possédant une orientation hors axe dirigée vers une direction cristallographique. Le premier élément comprend au moins une paroi latérale qui est orientée non parallèlement (c'est-à-dire de manière oblique ou perpendiculaire) à la direction cristallographique. On fait croître une première couche carbure silicium épitaxiale sur la surface du substrat carbure silicium qui comprend des premiers éléments. Des seconds éléments sont ensuite formés dans la première couche épitaxiale. Ces seconds éléments comprennent au moins une paroi latérale qui est orientée non parallèlement à la direction cristallographique. On fait croître ensuite une seconde couche carbure silicium épitaxiale sur la surface de la première couche carbure silicium épitaxiale qui comprend les seconds éléments.

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