Shallow homojunction solar cells

Details Shallow homojunction solar cells Shallow homojunction solar cells

H - Electricity

01

L

345/22

H01L 31/18 (2006.01) H01L 31/04 (2006.01)

Patent

CA 1150807

Abstract of the Disclosure The disclosure teaches a method of applying an electrical contact and an anodic antireflection coating to an n+ layer of a direct gap semiconductor device. In accordance with the invention, a metal contact is applied to the n+ type layer. The metal contact must be anodizable, Thereafter, the n+ layer is anodized whereby its thickness is reduced and an antireflection layer is formed thereover. The anodiz- able metal may comprise tin.

408201

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