Shallow homojunction solar cells

Details Shallow homojunction solar cells Shallow homojunction solar cells

H - Electricity

01

L

345/22

H01L 31/02 (2006.01) H01L 31/068 (2006.01)

Patent

CA 1137604

SHALLOW-HOMOJUNCTION SOLAR CELLS Abstract Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semiconductor material such as GaAs, as well as their fabrication, are disclosed. The shallow- homojunction solar cells have a n+/p/p+ structure in which the n+ top layer is limted to a thickness which permits significant carrier generation to occur in a lower semiconductor layer. An anodic antireflection coating is applied over the n+ top layer, and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.

324090

Affiliated with

Also associated with

Rating

Shallow homojunction solar cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Shallow homojunction solar cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shallow homojunction solar cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1126203