Shallow-junction semiconductor devices

Details Shallow-junction semiconductor devices Shallow-junction semiconductor devices

H - Electricity

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H01L 29/76 (2006.01) H01L 21/225 (2006.01) H01L 21/265 (2006.01) H01L 29/167 (2006.01)

Patent

CA 1222835

-10- SHALLOW-JUNCTION SEMICONDUCTOR DEVICES Abstract A shallow-junction semiconductor device is fabricated by initially implanting a neutral species (non- doping impurity) into a surface region of a semiconductor body prior to the introduction of a dopant therein. This implant serves as a getter for defects and also as a physical barrier. The thermal diffusivity of subsequently introduced dopant species is thereby significantly reduced. As a result, extremely shallow junctions are realized.

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