C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
25/133
C04B 35/16 (2006.01) C04B 35/56 (2006.01) C04B 35/575 (2006.01) C04B 35/645 (2006.01)
Patent
CA 1192384
ABSTRACT The invention is substantially pore-free shaped articles which consist essentially of polycrystalline .alpha. - or .beta. -silicon carbide in the form of a single-phase homogeneous microstructure having grain sizes not exceeding 8 µm, and which are manufactured from SiC powder, without the concomitant use of sintering aides, by isostatic hot-pressing in a vacuum-tight casing at temperatures of from about 1900°C to 2300°C and at pressures of from about 100 to 400 MPa. The SiC starting materials have .alpha.- and/or .beta. -SiC powders having a total content of metallic impurities not exceeding 0.1% by weight and a particle size of 4µm and finer.
407462
Hunold Klaus
Kriegesmann Jochen
Lipp Alfred
Reinmuth Klaus
Schwetz Karl A.
Gowling Lafleur Henderson Llp
Wacker-Chemie Gmbh
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