H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/283 (2006.01) G01T 1/24 (2006.01) H01L 23/48 (2006.01) H01L 31/048 (2006.01)
Patent
CA 2541256
A semiconductor radiation detector is provided for improved performance of pixels at the outer region of the crystal tile. The detector includes a semiconductor single crystal tile with two major planar opposing surfaces separated by a tile thickness. A cathode electrode covers one of the major surfaces extending around the sides of the tile a fraction of the tile thickness and insulated on the side portions by an insulating encapsulant. An exemplary example is given using Cadmium Zinc Telluride semiconductor, gold electrodes, and Humiseal encapsulant, with the side portions of the cathode extending approximately 40-60 percent of the tile thickness. The example with CZT allows use of monolithic CZT detectors in X-ray applications at high bias voltages. The shielding electrode design is demonstrated to improve significantly gamma radiation detection of outer pixels of the array, including energy resolution and photopeak counting efficiency. The detector has performance of detector leakage current density less than 6 nA/mm2 for a bias potential of substantially 1400V, and responsive to gamma radiation such that the energy resolution (full-width-at- half- maximum) of more than 90% of the pixels is less than 6%.
Awadalla Salah
Chen Henry
Awadalla Salah
Chen Henry
Fasken Martineau Dumoulin Llp
Redlen Technologies Inc.
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