Shootthrough fault protection system for bipolar transistors...

Details Shootthrough fault protection system for bipolar transistors... Shootthrough fault protection system for bipolar transistors...

H - Electricity

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H02H 7/122 (2006.01) H02H 3/44 (2006.01) H02H 7/12 (2006.01) H02M 5/458 (2006.01) H02M 1/00 (2006.01)

Patent

CA 1152152

Abstract: Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over a d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors.

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