Si photodiode and a method of making same

Details Si photodiode and a method of making same Si photodiode and a method of making same

H - Electricity

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L

345/27

H01L 31/08 (2006.01) H01L 31/105 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1182198

Si PHOTODIODE AND A METHOD OF MAKING SAME ABSTRACT OF THE DISCLOSURE A p-?-n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance. The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a ?-type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.

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