Si3n4 formed by nitridation of sintered silicon compact...

C - Chemistry – Metallurgy – 04 – B

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

261/1, 25/128

C04B 35/58 (2006.01) C04B 35/591 (2006.01)

Patent

CA 1076611

ABSTRACT OF THE DISCLOSURE A polycrystalline silicon nitride body is produced by shaping a particulate mixture of silicon powder and boron into a green body, sintering the body to a density ranging from 60% to 75% of the theoretical density of silicon, said sintered body having pores which are interconnecting and open to the surface of the body, and reacting said sintered body with gaseous nitrogen to convert it to silicon nitride.

268971

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Si3n4 formed by nitridation of sintered silicon compact... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Si3n4 formed by nitridation of sintered silicon compact..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Si3n4 formed by nitridation of sintered silicon compact... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-396766

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.