Side-etching method of making bipolar transistor

Details Side-etching method of making bipolar transistor Side-etching method of making bipolar transistor

H - Electricity

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H01L 29/06 (2006.01) H01L 21/033 (2006.01) H01L 21/225 (2006.01) H01L 21/331 (2006.01) H01L 21/465 (2006.01) H01L 23/532 (2006.01) H01L 29/417 (2006.01)

Patent

CA 1241458

Abstract of the Disclosure A bipolar transistor includes collector, base and emitter regions. The collector region consists of a first semiconductor region of a first conductivity type and formed in contact with a surface of a semiconductor layer. The base region consists of a second semiconductor region of a second conductivity type formed within the collector region to be in contact with the surface of the semiconductor layer. The emitter region consists of a third semiconductor region of the first conductivity type formed within the base region to be in contact with the surface of the semiconductor layer. The transistor also includes collector, base, and emitter electrodes. The collector and base electrodes are connected to the collector and base regions at opposite edges of a single opening formed in a field insulating film covering the surface of the semiconductor layer. The collector and base electrodes consist of a conductor. The emitter electrode is connected to the emitter region and consists of a conductor. The transistor further includes first and second insulating interlayers. The first insulating interlayer is formed between the collector and emitter electrodes. The second insulating interlayer is formed between the emitter and base electrodes. A distance between the collector and emitter electrodes on the surface of the semiconductor layer is substantially the same as that between the emitter and base electrodes.

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