G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.21
G11C 11/40 (2006.01) G11C 19/28 (2006.01) H01L 29/768 (2006.01) H01L 29/78 (2006.01)
Patent
CA 1079402
Abstract of the Disclosure A buried channel charge coupled device (BCCD) is operated by an improved process in a two-phase operation. The device includes a buried channel in a semiconductor substrate below an insulating layer on a surface of the substrate and below the electrodes of the device. The electrodes are divided into first and second electrodes with the first electrodes spaced apart in a first level of the insulating layer and electrically insulated from the semiconductor substrate and the second electrodes spaced apart and carried by the insulating layer in a second level and arranged over the interspaces between the first electrodes. Each of the second electrodes is electrically connected to an adjacent first electrode. The device is operated in a two- phase manner and the operation is improved by the provision of a bias voltage which is connected either to all of the electrodes or to the substrate, the bias voltage effecting a potential difference between the electrodes and the substrate which is either greater than or less than a predetermined magnitude so as to effect charge shifting in one direction or the other, respectively.
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