C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/196, 150/20
C01B 33/04 (2006.01)
Patent
CA 1224013
ABSTRACT A process for the removal of and analysis of phosphine and arsine impurities in silane gas. Silane gas which normally contains the impurities of AsH3 and PH3 is contacted with a solution of NaAlH4 in dimeth- oxyethane to remove the impurities therefrom. The dimeth- oxyethane or other ether solution may then be hydrolyzed with water or alcohol to evolve hydrogen gas from the NaAlH4 and to re-evolve phosphine and arsine which may then be quantitatively determined by gas chromatography, atomic absorption, or other means.
479345
Nelson Gunner E.
Smith Isaac L.
Macrae & Co.
Memc Electronic Materials Inc.
LandOfFree
Silane purification process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silane purification process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silane purification process will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1244115