Silcon-doped inygal-yas laser

Details Silcon-doped inygal-yas laser Silcon-doped inygal-yas laser

H - Electricity

01

S

H01S 3/08 (2006.01) H01L 21/20 (2006.01) H01S 5/30 (2006.01) H01S 5/223 (2006.01)

Patent

CA 2041991

Abstract of the Invention Silicon-doped InyGa1-yAs can be used as the lasant material of a laser diode andcan be substantially lattice-matched to either GaAs or AlxGa1-xAs where O<X?1. The wavelength of output radiation from such a laser diode can be positioned within the range from about 880 to about 1100 nm through appropriate selection of the silicon and indium concentrations.

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