G - Physics – 02 – F
Patent
G - Physics
02
F
G02F 1/35 (2006.01) G02F 1/355 (2006.01) G02F 1/37 (2006.01) G02F 1/383 (2006.01)
Patent
CA 2267861
The Ge concentration in a core part (10a) is higher than 12 mol.% and not higher than 30 mol.%. The voltage which is applied at the time of ultraviolet radiation excitation polling is within a range of 1 x 10 5 - 8 x 10 5 V/cm. Thus, SiO2 glass material has a nonlinear optical constant d of not less than 2.5 pm/V. Therefore, an optical functional device such as an optical switch can be made of the glass material.
La concentration de Ge dans une partie noyau (10a) est supérieure à 12 % en mole et inférieure ou égale à 30 % en mole. La tension qui est appliquée au moment du rognage par excitation par rayonnement ultraviolet est comprise entre 1 x 10<5> et 8 x 10<5> V/cm. Ainsi, un matériau en verre à base de SiO2 possède une constante optique non linéaire d qui n'est pas inférieure à 2,5 pm/V. Par conséquent, un dispositif fonctionnel optique, tel qu'un commutateur optique, peut être fabriqué à partir de ce matériau en verre.
Fujiwara Takumi
Ikushima Akira
Takahashi Masahide
Gowling Lafleur Henderson Llp
Toyota Jidosha Kabushiki Kaisha
Toyota School Foundation
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