Silicon avalanche photodiode array

Details Silicon avalanche photodiode array Silicon avalanche photodiode array

H - Electricity

01

L

H01L 31/107 (2006.01) H01J 31/26 (2006.01) H01J 31/50 (2006.01) H01L 21/261 (2006.01) H01L 27/144 (2006.01) H01L 27/146 (2006.01) H01L 31/02 (2006.01) H01L 31/028 (2006.01) H01L 31/0288 (2006.01) H01L 31/0352 (2006.01)

Patent

CA 2095849

2095849 9209109 PCTABS00013 A wafer of neutron transmutation doped silicon having a pn junction between extended opposite surfaces is formed with bevelled edges. A plurality of reverse biased signal contacts is disposed on one surface to provide an integrated array of photodiodes.

Affiliated with

Also associated with

Rating

Silicon avalanche photodiode array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon avalanche photodiode array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon avalanche photodiode array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1440750