Silicon-based mass airflow sensor and its fabrication method

Details Silicon-based mass airflow sensor and its fabrication method Silicon-based mass airflow sensor and its fabrication method

G - Physics

01

F

73/69

G01F 1/68 (2006.01) G01F 1/684 (2006.01) G01L 9/00 (2006.01) G01P 5/10 (2006.01)

Patent

CA 1325342

SILICON BASED MASS AIRFLOW SENSOR AND ITS FABRICATION METHOD ABSTRACT OF THE DISCLOSURE A mass airflow sensor is fabricated on a semiconductor substrate (18) and includes a dielectric diaphragm (1), p-etch-stopped silicon rim (2), thin-film heating (3) and temperature sensing elements (4-7), and tapered chip edges (18). The dielectric diaphragm (1) is formed with thin silicon oxide and silicon nitride in a sandwich structure (32) and provides excellent thermal insulation for the sensing (4-7) and heating (3) elements of the sensor. The diaphragm (1) dimensions, including thickness, are accurately controlled through the use of the heavily-p-doped silicon rim (2) to help ensure uniform and reproducible sensor performance.

586588

Affiliated with

Also associated with

Rating

Silicon-based mass airflow sensor and its fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-based mass airflow sensor and its fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-based mass airflow sensor and its fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1298690