H - Electricity – 01 – L
Patent
H - Electricity
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L
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H01L 23/66 (2006.01) H01L 23/48 (2006.01) H01S 5/022 (2006.01) H01S 5/026 (2006.01) H01S 5/02 (2006.01) H01S 5/042 (2006.01) H01S 5/062 (2006.01)
Patent
CA 2005788
SILICON-BASED MOUNTING STRUCTURE FOR SEMICONDUCTOR OPTICAL DEVICES Abstract A silicon-based laser mounting structure is disclosed which provides improved interconnection between a semiconductor optical device, such as a laser. and an external high frequency modulation current source, by reducing the presence of parasitic inductive elements in the interconnecting network. The structure includes a stripline transmission path formed by depositing metal conductive strips on the top and bottom surfaces of a silicon substrate. The conductive strips arecoupled at one end to the external modulation current source. A thin film resistor is deposited between the second end of the top conductive strip and the semiconductor optical device. This thin film resistor is utilized to provide impedance matching between the optical device and the stripline. That is, for a laser with an impedance ZL, and a stripline designed to have an impedance ZS, the resistance R is chosensuch that R+ZL=ZS. Utilizing silicon processing techniques, the thin film resistor may be placed adjacent to the laser, reducing the parasitics associated with their interconnection. A conductive via is formed through the substrate to provide a top- side bonding location for connecting the optical device to the bottom metal conductor, by providing the top-side site, the parasitic inductance associated with this interconnection is considerably reduced.
Dietrich Norman Ralph
Moyer Ralph Salvatore
Wong Yiu-Huen
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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