Silicon based substrate hafnium oxide top...

B - Operations – Transporting – 32 – B

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B32B 18/00 (2006.01) B01J 19/02 (2006.01) C04B 35/565 (2006.01) C04B 35/584 (2006.01) C23C 4/10 (2006.01) F01D 5/28 (2006.01)

Patent

CA 2504264

A top barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment and comprises at least 65 mol % hafnium oxide.

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