Silicon carbide and related wide-bandgap transistors on semi...

Details Silicon carbide and related wide-bandgap transistors on semi... Silicon carbide and related wide-bandgap transistors on semi...

H - Electricity

01

L

H01L 21/36 (2006.01) H01L 21/42 (2006.01) H01L 21/77 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2654634

A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.

L'invention concerne un procédé d'élaboration d'une couche épitaxiale semi-isolante qui comprend l'implantation d'un substrat ou d'une première couche épitaxiale formée sur le substrat avec des ions bore pour former une région implantée au bore sur une surface du substrat ou de la première couche épitaxiale, et la croissance d'une deuxième couche épitaxiale sur la région implantée au bore du substrat ou de la première couche épitaxiale pour former une couche épitaxiale semi-isolante.

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