Silicon carbide composite and process for production

Details Silicon carbide composite and process for production Silicon carbide composite and process for production

C - Chemistry, Metallurgy

04

B

25/133

C04B 35/14 (2006.01) C04B 35/56 (2006.01)

Patent

CA 1178424

60MP-2044 SILICON CARBIDE COMPOSITE AND PROCESS FOR PRODUCTION ABSTRACT OF THE DISCLOSURE Sintered silicon carbide composites containing diamond crystals are described. They are made through a process comprising: (a) forming a first dispersion of diamond crystals and carbon black in paraffin; (b) forming a second dispersion of carbon fiber, carbon black and filler in paraffin; (c) compacting one of said dispersions to produce a physically stable intermediate compact; (d) recompacting said intermediate with the remaining dispersion to produce a binary compact; (e) subjecting said binary compact to a vacuum for a period of time at at temperature sufficient to vaporize essentially all of said paraffin; (f) infiltrating said binary compact with liquid silicon, and (g) sintering the binary compact containing infiltrated silicon under conditions sufficient to produce a .beta.-silicon carbide binder uniting the resultant composite. These composites may be formed in a variety of specialized shapes and are particularly useful as cutting materials and/or wear components, where they exhibit extreme wear resistance.

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