C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
25/133, 25/140
C01B 31/36 (2006.01) B01J 3/06 (2006.01) B24D 3/06 (2006.01) C04B 35/573 (2006.01)
Patent
CA 1171248
60MP-2003 SILICON CARBIDE COMPOSITE AND PROCESS FOR PRODUCTION ABSTRACT OF THE DISCLOSURE Sintered silicone carbide composites con- taining diamond crystals are described. They are made through a processs comprising: (a) forming a first dispersion of diamond crystals and carbon black in paraffin; (b) forming a second dispersion of carbon fiber, carbon black and filler in paraffin; (c) compacting said dispersions together to produce an integral bi-layer composite; (d) subjecting said composite to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of said paraffin; (d) heating silicon to cause liquefaction and direct infiltration into both layers of said composite; and (f) sintering the composite containing silicon under conditions sufficient to produce a .beta.-silicon carbide binder uniting said composite. The resultant composites are particularly useful as cutting materials and/or wear components, where they exhibit extreme wear resistance.
381405
Company General Electric
Eckersley Raymond A.
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