Silicon carbide composite and process for production

Details Silicon carbide composite and process for production Silicon carbide composite and process for production

C - Chemistry, Metallurgy

01

B

25/133, 25/140

C01B 31/36 (2006.01) B01J 3/06 (2006.01) B24D 3/06 (2006.01) C04B 35/573 (2006.01)

Patent

CA 1171249

60 MP 2023 SILICON CARBIDE COMPOSITE AND PROCESS FOR PRODUCTION ABSTRACT OF THE DISCLOSURE Sintered silicon carbide composites containing diamond crystals are described. They are made through a process comprising: (a) forming a first dispersion of diamond crystals and carbon black in paraffin; (b) forming a second dispersion of carbon fiber, carbon black and filler in paraffin; (c) compacting one of said dispersions to produce a physically stable intermediate compact; (d) recompacting said intermediate with the remaining dispersion to produce a binary compact; (e) subjecting said binary compact to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of said paraffin; (f) infiltrating said binary compact with liquid silicon, and (g) sintering the binary compact containing infiltrated silicon under conditions sufficient to produce a .beta.-silicon carbide binder uniting the resultant composite. These composites may be formed in a variety of specialized shapes and are particularly useful as cutting materials and/or wear components, where they exhibit extreme wear resistance.

381415

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