C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
25/133
C04B 35/14 (2006.01) C04B 35/56 (2006.01)
Patent
CA 1178425
60MP-2037 IMPROVED SILICON CARBIDE COMPOSITE AND PROCESS FOR PRODUCTION ABSTRACT OF THE DISCLOSURE Sintered silicon carbide compositions enveloped with diamond or cubic boron nitride (CBN) crystals are described. They are made through a process comprising; (a) forming a first and second dispersion of uncoated diamond crystals and carbon black in paraffin; (b) forming a mixture of carbon fiber, carbon black and filler in paraffin; (c) compacting said dispersions and mixture together to produce an integral compact wherein said dispersions from an evelope about said mixture; (d) subjecting said compact to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of said paraffin; (e) heating silicon to cause liquefaction, direct infiltration and diffusion into said compact in vacuum, and (f) sintering the compact containing silicon under conditions sufficient to produce a .beta.-silicone carbide binder uniting said composite without applying pressure. In preferred composites, the dispersions contain different properties of diamond or cubic boron nitride crystals. One may be utilized for a peripheral band about the mixture; the other connecting the edge as a surface layer of the composition. These composites are particularly useful as cutting material and/or wear components, where they exhibit extreme wear resistance.
397718
Company General Electric
Eckersley Raymond A.
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