Silicon carbide schottky diode and method of making same

Details Silicon carbide schottky diode and method of making same Silicon carbide schottky diode and method of making same

H - Electricity

01

L

356/159

H01L 29/872 (2006.01) H01L 21/04 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2008176

-16- SILICON CARBIDE SCHOTTKY DIODE AND METHOD OF MAKING SAME Abstract Of The Invention A high performance silicon carbide Schottky contact comprises a platinum containing contact on .alpha.-silicon carbide, specifically 6H-.alpha. silicon carbide. At least part of the platinum- containing contact may comprise platinum silicide which may be formed by annealing to convert at least part of the platinum to platinum silicide. An ohmic contact to the substrate is also provided. A guard ring or field plate may be provided. The Schottky contact exhibits lower forward resistance, lower reverse current and higher reverse breakdown voltage than heretofore available designs.

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