Silicon carbide semiconductor device

Details Silicon carbide semiconductor device Silicon carbide semiconductor device

H - Electricity

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H01L 29/12 (2006.01) H01L 21/28 (2006.01) H01L 21/336 (2006.01) H01L 21/337 (2006.01) H01L 29/417 (2006.01) H01L 29/78 (2006.01) H01L 29/808 (2006.01)

Patent

CA 2739410

Provided is a silicon carbide semiconductor device capable of lowering the contact resistance of an ohmic electrode and achieving high reverse breakdown voltage characteristics. A semiconductor device (1) includes a substrate (2) and a p+ region (25) as an impurity layer The substrate (2) of the first conductive type (n type) is made of silicon carbide and has a dislocation density of 5 × 10 3 CM-2 or less The p+ region (25) is formed on the substrate (2), in which the concentration of the conductive impurities having the second conductive type different from the first conductive type is 1 × 10 20 CM-3 or more and 5 × 10 21 cm-3 or less.

Linvention concerne un dispositif à semi-conducteur au carbure de silicium dans lequel la résistance de contact dune électrode ohmique est réduite tandis que lon obtient des caractéristiques élevées de tension de tenue. Un dispositif à semi-conducteur (1) comprend un substrat (2) et une région p+ (25) en tant que couche dimpuretés. Le substrat (2) se compose de carbure de silicium, présente une densité de dislocation de 5×103 cm-2 ou moins, et présente un premier type de conductivité (type n). La région p+ (25) est formée sur le substrat (2), et la concentration dimpuretés conductrices dun second type de conductivité différent du premier type de conductivité est de 1×1020 cm-3 ou plus et de 5×1021 cm-3 au maximum.

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