Silicon carbide semiconductor structures, devices, and...

Details Silicon carbide semiconductor structures, devices, and... Silicon carbide semiconductor structures, devices, and...

H - Electricity

01

L

H01L 29/772 (2006.01) H01L 21/335 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2711066

There are provided semiconductor structures and devices comprising silicon carbide (SiC) and methods for making the same. The structures and devices comprise a base or shielding layer, channel and surface layer, all desirably formed via ion implantation. As a result, the structures and devices provided herein are hard, "normally off" devices, i.e., exhibiting threshold voltages of greater than about 3 volts.

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