Silicon carbide substrate

Details Silicon carbide substrate Silicon carbide substrate

H - Electricity

01

L

H01L 21/02 (2006.01) H01L 21/20 (2006.01) H01L 21/336 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2753373

A silicon carbide substrate (81) has a substrate region (R1) and a support portion (30). The substrate region (R1) has a first single crystal substrate (11). The support portion (30) is joined to a first backside surface (B1) of the first single crystal (11). The dislocation density of the first single crystal substrate (11) is lower than the dislocation density of the support portion (30). At least one of the substrate region (R1) and the support portion (30) has voids.

L'invention porte sur un substrat en carbure de silicium (81) qui comporte une région substrat (R1) et un support (30). La région substrat (R1) présente un premier substrat monocristallin (11). Le support (30) est lié à une première surface arrière (B1) du premier substrat monocristallin (11). Le premier substrat monocristallin (11) présente une plus faible densité de dislocation que celle du support (30). La région substrat (R1) et/ou le support (30) présente des vides.

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