Silicon carbide substrate, epitaxial layer provided...

Details Silicon carbide substrate, epitaxial layer provided... Silicon carbide substrate, epitaxial layer provided...

H - Electricity

01

L

H01L 29/24 (2006.01) H01L 21/302 (2006.01) H01L 21/20 (2006.01) H01L 29/04 (2006.01)

Patent

CA 2760162

The present invention provides a silicon carbide substrate, an epitaxial layer provided substrate, a semiconductor device, and a method for manufacturing the silicon carbide substrate, each of which achieves reduced on-resistance. The silicon carbide substrate is a silicon carbide substrate having a main surface, and includes: a SiC single- crystal substrate formed in at least a portion of the main surface; and a base member disposed to surround the SiC single-crystal substrate. The base member includes a boundary region and a base region. The boundary region is adjacent to the SiC single-crystal substrate in a direction along the main surface, and has a crystal grain boundary therein. The base region is adjacent to the SiC single-crystal substrate in a direction perpendicular to the main surface, and has an impurity concentration higher than that of the SiC single-crystal substrate.

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