Silicon charge-handling device employing sic electrodes

Details Silicon charge-handling device employing sic electrodes Silicon charge-handling device employing sic electrodes

H - Electricity

01

L

345/1

H01L 21/28 (2006.01) H01L 21/314 (2006.01) H01L 27/148 (2006.01) H01L 29/49 (2006.01)

Patent

CA 1093664

SILICON CHARGE-HANDLING DEVICE EMPLOYING SiC ELECTRODES ABSTRACT OF THE DISCLOSURE A solid state imaging device is formed of a bulk of monocrystalline silicon which has been suitably doped. A transparent layer of SiO2 overlays the bulk silicon, and atop the SiO2 layer is at least one pattern of doped SiC electrodes. Successive patterns of SiC electrodes are insulated from each other by SiO2. The SiC and SiO2, being derivatives of silicon, passivate the bulk and serve, respectively, as transparent electrodes and transparent support for such electrodes.

296304

Affiliated with

Also associated with

Rating

Silicon charge-handling device employing sic electrodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon charge-handling device employing sic electrodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon charge-handling device employing sic electrodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1005874