Silicon crystallization using self-assembled monolayers

Details Silicon crystallization using self-assembled monolayers Silicon crystallization using self-assembled monolayers

H - Electricity

01

L

H01L 21/20 (2006.01)

Patent

CA 2532638

A display device comprises a substrate having a layer of crystalline or polycrystalline semiconductor material disposed over the substrate, wherein the substrate has a strain point that is lower than a forming temperature of the layer. The crystalline or polycrystalline material is fabricated by a method that includes providing a self-assembled monolayer (SAM) over the substrate, depositing a layer of material over the SAM, and substantially crystallizing the layer.

L'invention concerne un dispositif d'affichage comprenant un substrat qui comporte une couche de matériau semi-conducteur cristallin ou polycristallin disposé sur le substrat. Le substrat présente une température inférieure de recuit se situant en dessous de la température de formation de la couche. Le matériau cristallin ou polycristallin est produit au moyen d'un procédé consistant à recouvrir le substrat d'une monocouche auto-assemblée (SAM), à déposer une couche de matériau par-dessus cette monocouche auto-assemblée, et à cristalliser la couche déposée dans sa quasi totalité.

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