Silicon crystals and process for their preparation

Details Silicon crystals and process for their preparation Silicon crystals and process for their preparation

C - Chemistry, Metallurgy

30

B

148/3.7

C30B 15/00 (2006.01) B22D 27/04 (2006.01) C30B 11/00 (2006.01) H01L 29/00 (2006.01) H01L 31/00 (2006.01)

Patent

CA 1061688

ABSTRACT OF THE DISCLOSURE A plate-like silicon crystal having a columnar struc- ture formed along the direction of the shortest axis, produced by cooling molten silicon, which may contain a doping agent, in a temperature gradient between the two largest boundary sur- faces of the melt, one of which has a maximum temperature of 1200°C., and the opposite-surface being at least 200° to 1000°C. higher, but below the melting point of silicon.

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