Silicon device with uniformly thick polysilicon

Details Silicon device with uniformly thick polysilicon Silicon device with uniformly thick polysilicon

H - Electricity

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H01L 21/20 (2006.01) C23C 14/58 (2006.01) H01L 21/3215 (2006.01) H01L 21/66 (2006.01) H01L 29/04 (2006.01) C23C 14/14 (2006.01)

Patent

CA 1093216

SILICON DEVICE WITH UNIFORMLY THICK POLYSILICON Abstract of the Disclosure Thickness control problems inherent in the chemical vapor deposition of polysilicon layers on silicon wafers are avoided by an improved vacuum deposition technique. To produce an extremely flat, and uniformly and extremely thin coating of polysilicon on a layer of silicon oxide, the layer is exposed, in a vacuum deposition chamber, to a vapor of silicon. The silicon vapor is produced from a source comprised of monocrystalline silicon. This technique is an improvement over the prior art practice of passing a gaseous medium, including ions of silicon, over the layer. - 1 -

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