Silicon dioxide deposition by plasma activated evaporation...

C - Chemistry – Metallurgy – 23 – C

Patent

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C23C 14/30 (2006.01) B05D 7/02 (2006.01) C08J 7/04 (2006.01) C23C 14/10 (2006.01)

Patent

CA 2241678

A plasma activated reactive deposition process is used to deposit silicon oxide scratch resistant coatings on various substrates. The process comprises evaporating silicon or silicon oxide into an argon and nitrous oxide plasma which is directed to the surface to be coated.

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