Silicon gate fet-niobium oxide diode-memory cell

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

352/82.3

H01L 27/10 (2006.01) H01L 21/00 (2006.01)

Patent

CA 960776

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Silicon gate fet-niobium oxide diode-memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon gate fet-niobium oxide diode-memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon gate fet-niobium oxide diode-memory cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1005541

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.